參數(shù)資料
型號(hào)： BUK6E3R4-40C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： PLASTIC, TO-262, I2PAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 350K
代理商： BUK6E3R4-40C
BUK6E3R4-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2010
7 of 14
NXP Semiconductors
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
48
82
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae331
0
30
60
90
120
150
g
fs
(S)
0
20
40
60
80
I
D
(A)
003aae334
0
2
4
6
8
10
12
0
5
10
15
V
GS
(V)
R
DSon
(m
Ω
)
003aae333
0
20
40
60
80
100
I
D
(A)
0
2
4
6
V
GS
(V)
Tj = 25
°
C
Tj = 175
°
C
003aad002
0
50
100
150
200
250
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
3.8
4.0
4.5
5.0
6.0
3.2
V
GS
(V) = 10
3.4
3.6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6E3R4-40C,127 功能描述:MOSFET N-CHAN 40V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6E3R4-40C127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BUK6E4R0-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:120V, On Resistance Rds(on):3600ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power , RoHS Compliant: Yes
BUK6E4R0-75C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7105-40AIE 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 155A 5-Pin(4+Tab) D2PAK
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