參數(shù)資料
型號： BUK6E3R4-40C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： PLASTIC, TO-262, I2PAK-3
文件頁數(shù)： 2/14頁
文件大?。?/td> 350K
代理商： BUK6E3R4-40C
BUK6E3R4-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2010
2 of 14
NXP Semiconductors
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
[1]
Continuous current is limited by package.
2.
Pinning information
3.
Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
40 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
368
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 32 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
42
-
nC
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
G
gate
D
Drain
S
source
D
mounting base; connected to
drain
Simplified outline
Graphic symbol
SOT226 (I2PAK)
3
2
1
mb
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
BUK6E3R4-40C
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相關代理商/技術參數(shù)
參數(shù)描述
BUK6E3R4-40C,127 功能描述:MOSFET N-CHAN 40V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6E3R4-40C127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BUK6E4R0-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:120V, On Resistance Rds(on):3600ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power , RoHS Compliant: Yes
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