參數資料
型號： BUK6E3R4-40C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： PLASTIC, TO-262, I2PAK-3
文件頁數： 6/14頁
文件大?。?/td> 350K
代理商： BUK6E3R4-40C
BUK6E3R4-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2010
6 of 14
NXP Semiconductors
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 2.5 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12
; see
Figure 11
40
36
1.8
-
-
2.3
-
-
2.8
V
V
V
V
GS(th)
gate-source threshold
voltage
-
-
3.3
V
0.8
-
-
V
I
DSS
drain leakage current
-
-
-
-
-
-
0.02
2
2
3.05
500
1
100
100
3.6
μA
μA
nA
nA
m
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
4.2
5.3
m
-
4.5
6
m
-
-
7.6
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 32 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
125
-
nC
-
71
-
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
-
-
-
-
-
23
42
6016
739
510
-
-
8020
870
700
nC
nC
pF
pF
pF
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DS
= 30 V; R
L
= 1.2
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
40
87
224
117
4.5
-
-
-
-
-
ns
ns
ns
ns
nH
from drain lead 6 mm from package to
centre of die; T
j
= 25 °C
from source lead to source bond pad;
T
j
= 25 °C
L
S
-
7.5
-
nH
相關PDF資料
PDF描述
BUK6E4R0-75C N-channel TrenchMOS FET
BUK7105-40ATE N-channel TrenchPLUS standard level FET
BUK7107-40ATC N-channel TrenchPLUS standard level FET
BUK7108-40AIE N-channel TrenchPLUS standard level FET
BUK714R1-40BT N-channel TrenchPLUS standard level FET
相關代理商/技術參數
參數描述
BUK6E3R4-40C,127 功能描述:MOSFET N-CHAN 40V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6E3R4-40C127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BUK6E4R0-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:120V, On Resistance Rds(on):3600ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power , RoHS Compliant: Yes
BUK6E4R0-75C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7105-40AIE 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 155A 5-Pin(4+Tab) D2PAK
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*