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參數(shù)資料
| 型號： | BUK6E3R4-40C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | PLASTIC, TO-262, I2PAK-3 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 350K |
| 代理商： | BUK6E3R4-40C |
BUK6E3R4-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2010
5 of 14
NXP Semiconductors
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
5.
Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
0.74
Unit
K/W
R
th(j-a)
vertical in free air
-
60
-
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
003aae330
10
3
10
2
10
1
1
10
5
10
4
10
3
10
2
10
1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ
= 0.5
0.2
0.02
0.1
0.05
single pulse
10
6
t
p
t
p
T
T
P
t
δ
=
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