- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385200 > BUK6C1R5-40C (NXP SEMICONDUCTORS) N-channel TrenchMOS intermediate level FET PDF資料下載
參數(shù)資料
| 型號(hào)： | BUK6C1R5-40C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 319 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-7 |
| 文件頁(yè)數(shù)： | 12/13頁(yè) |
| 文件大小： | 205K |
| 代理商： | BUK6C1R5-40C |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)
BUK6C1R5-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Objective data sheet
Rev. 1 — 5 August 2011
12 of 13
NXP Semiconductors
BUK6C1R5-40C
N-channel TrenchMOS intermediate level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale
— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at
http://www.nxp.com/profile/terms
, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante
,
Bitport
,
Bitsound
,
CoolFlux
,
CoReUse
,
DESFire
,
EZ-HV
,
FabKey
,
GreenChip
,
HiPerSmart
,
HITAG
,
I2C-bus
logo,
ICODE
,
I-CODE
,
ITEC
,
Labelution
,
MIFARE
,
MIFARE Plus
,
MIFARE Ultralight
,
MoReUse
,
QLPAK
,
Silicon Tuner
,
SiliconMAX
,
SmartXA
,
STARplug
,
TOPFET
,
TrenchMOS
,
TriMedia
and
UCODE
— are trademarks of NXP B.V.
HD Radio
and
HD Radio
logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit:
http://www.nxp.com
For sales office addresses, please send an email to:
salesaddresses@nxp.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK6E2R0-30C | N-channel TrenchMOS intermediate level FET |
| BUK6E2R3-40C | N-channel TrenchMOS intermediate level FET |
| BUK6E3R2-55C | N-channel TrenchMOS intermediate level FET |
| BUK6E3R4-40C | N-channel TrenchMOS intermediate level FET |
| BUK6E4R0-75C | N-channel TrenchMOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK6C2R1-55C | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 228A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:228A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V ;RoHS Compliant: Yes |
| BUK6C2R1-55C,118 | 功能描述:MOSFET N-chan TrenchMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK6C3R3-75C | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 75V 181A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 75V, 181A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 75V, 181A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:181A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V ;RoHS Compliant: Yes |
| BUK6C3R3-75C,118 | 功能描述:MOSFET N-chan TrenchMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK6D43-40PX | 功能描述:BUK6D43-40P SOT1220 SOT1220 制造商:nexperia usa inc. 系列:汽車級(jí)，AEC-Q101，TrenchMOS? 零件狀態(tài):在售 FET 類型:P 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:14A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.7V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:36nC @ 10V Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:1260pF @ 20V FET 功能:- 功率耗散（最大值）:15W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:43 毫歐 @ 6A，10V 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:6-DFN2020MD（2x2） 封裝/外殼:6-UDFN 裸露焊盤 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。