- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385199 > BUK652R6-40C (NXP SEMICONDUCTORS) N-channel TrenchMOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | BUK652R6-40C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS FET |
| 中文描述： | 100 A, 40 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 349K |
| 代理商： | BUK652R6-40C |
BUK652R6-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 December 2010
7 of 14
NXP Semiconductors
BUK652R6-40C
N-channel TrenchMOS FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 25 V
-
0.85
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
60
104
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae582
0
40
80
120
160
200
g
fs
(S)
0
10
20
30
40
I
D
(A)
003aae597
0
50
100
150
200
250
I
D
(A)
0
2
4
6
V
GS
(V)
T
j
= 25
°
C
T
j
= 175
°
C
003aae585
0
10
20
30
0
5
10
15
20
V
GS
(V)
R
DSon
(m
Ω
)
003aae580
0
50
100
150
200
250
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
3.8
10.0
4.5
5.0
3.2
V
GS
(V) = 4.0 V
3.4
3.6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK653R2-55C | N-channel TrenchMOS intermediate level FET |
| BUK653R3-30C | N-channel TrenchMOS intermediate level FET |
| BUK653R4-40C | N-channel TrenchMOS intermediate level FET |
| BUK653R5-55C | N-channel TrenchMOS intermediate level FET |
| BUK653R7-30C | N-channel TrenchMOS intermediate level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK652R6-40C,127 | 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK652R7-30C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V100ASOT78 |
| BUK652R7-30C,127 | 功能描述:MOSFET N-CHAN 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK653R2-55C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT78 |
| BUK653R2-55C,127 | 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。