參數(shù)資料
型號(hào): BUK652R6-40C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS FET
中文描述: 100 A, 40 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 11/14頁(yè)
文件大?。?/td> 349K
代理商: BUK652R6-40C
BUK652R6-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 December 2010
11 of 14
NXP Semiconductors
BUK652R6-40C
N-channel TrenchMOS FET
8.
Revision history
Table 7.
Document ID
BUK652R6-40C v.2
Modifications:
Revision history
Release date
20101216
Various changes to content.
Status changed from Objective to Product.
20100705
Data sheet status
Product data sheet
Change notice
-
Supersedes
BUK652R6-40C v.1
BUK652R6-40C v.1
Objective data sheet
-
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK652R6-40C,127 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R7-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V100ASOT78
BUK652R7-30C,127 功能描述:MOSFET N-CHAN 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK653R2-55C 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT78
BUK653R2-55C,127 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube