- 您現在的位置：買賣IC網 > PDF目錄385199 > BUK652R6-40C (NXP SEMICONDUCTORS) N-channel TrenchMOS FET PDF資料下載
參數資料
| 型號： | BUK652R6-40C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS FET |
| 中文描述： | 100 A, 40 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 4/14頁 |
| 文件大?。?/td> | 349K |
| 代理商： | BUK652R6-40C |
BUK652R6-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 December 2010
4 of 14
NXP Semiconductors
BUK652R6-40C
N-channel TrenchMOS FET
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aac798
0
60
120
180
240
0
50
100
150
200
T
mb
(
°
C)
I
D
(A)
(1)
T
mb
(
°
C)
0
200
150
50
100
03na19
40
80
120
P
der
(%)
0
003aae575
10
-1
1
10
10
2
10
3
10
4
I
D
(A)
10
-1
1
10
10
2
V
DS
(V)
Limit R
DSon
= V
DS
/ I
D
DC
100
μ
s
10 ms
10
μ
s
100 ms
相關PDF資料 |
PDF描述 |
|---|---|
| BUK653R2-55C | N-channel TrenchMOS intermediate level FET |
| BUK653R3-30C | N-channel TrenchMOS intermediate level FET |
| BUK653R4-40C | N-channel TrenchMOS intermediate level FET |
| BUK653R5-55C | N-channel TrenchMOS intermediate level FET |
| BUK653R7-30C | N-channel TrenchMOS intermediate level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK652R6-40C,127 | 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK652R7-30C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V100ASOT78 |
| BUK652R7-30C,127 | 功能描述:MOSFET N-CHAN 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK653R2-55C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT78 |
| BUK653R2-55C,127 | 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。