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參數(shù)資料
| 型號： | BUK625R2-30C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | POWER, FET |
| 封裝： | PLASTIC, DPAK, SC-63, 3 PIN |
| 文件頁數(shù)： | 6/14頁 |
| 文件大小： | 172K |
| 代理商： | BUK625R2-30C |
BUK625R2-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 July 2011
6 of 14
NXP Semiconductors
BUK625R2-30C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source breakdown
voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
30
27
1.8
-
-
2.3
-
-
2.8
V
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 9
drain leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
drain-source on-state
resistance
Figure 11
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
see
Figure 12
Dynamic characteristics
Q
G(tot)
total gate charge
-
-
3.3
V
0.8
-
-
V
I
DSS
-
-
-
-
-
-
0.02
2
2
4.4
500
1
100
100
5.2
μA
μA
nA
nA
m
I
GSS
R
DSon
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C; see
-
6
7.5
m
-
7.1
9.5
m
-
-
10
m
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 24 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
54.8
-
nC
-
31
-
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
-
-
-
-
-
-
-
-
-
-
10.2
16.2
2600
484
288
15.3
41
97
66
3.5
-
-
3470
581
395
-
-
-
-
-
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
V
DS
= 25 V; R
L
= 1
; V
GS
= 10 V;
R
G(ext)
= 10
from upper edge of drain mounting
base to centre of die ; T
j
= 25 °C
from source lead to source bond
pad ; T
j
= 25 °C
L
S
internal source inductance
-
7.5
-
nH
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