參數(shù)資料
型號： BUK6213-30A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： N溝道 TrenchMOS 中間級場效應(yīng)管
封裝： BUK6213-30A<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數(shù)： 7/10頁
文件大?。?/td> 280K
代理商： BUK6213-30A
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 2 February 2011
7 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
8.
Revision history
Table 7.
Document ID
BUK6213-30A v.3
Modifications:
Revision history
Release date
20110202
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Various changes to content.
20030922
Product data sheet
Data sheet status
Product data sheet
Change notice
-
Supersedes
BUK6213-30A v.2
BUK6213-30A v.2
(9397 750 12028)
-
-
相關(guān)PDF資料
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BUK6213-30C N-channel TrenchMOS intermediate level FET
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BUK6217-55C N-channel TrenchMOS intermediate level FET
BUK6218-40C N-channel TrenchMOS intermediate level FET
BUK6226-75C N-channel TrenchMOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6213-30A,118 功能描述:MOSFET Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6213-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V33ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,33A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,33A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6213-30C,118 功能描述:MOSFET N-CHAN 30V 47A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6215-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V57ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6215-75C,118 功能描述:MOSFET N-CHAN 75V 57A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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