參數資料
型號： BUK6213-30A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： N溝道 TrenchMOS 中間級場效應管
封裝： BUK6213-30A<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數： 4/10頁
文件大?。?/td> 280K
代理商： BUK6213-30A
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 2 February 2011
4 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
5.
Thermal characteristics
6.
Characteristics
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03nk62
1
10
10
2
10
3
1
10
10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/I
D
1 ms
t
p
= 10
μ
s
100
μ
s
Capped at 55 A due to bondwires
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
Min
-
Typ
-
Max
1.4
Unit
K/W
R
th(j-a)
-
71.4
-
K/W
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
30
27
1
-
-
1.8
-
-
3
V
V
V
V
GS(th)
gate-source threshold
voltage
gate-source threshold
voltage
V
GSth
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 10 A
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 4
; see
Figure 5
-
0.5
-
-
-
-
-
-
-
-
0.05
2
2
15
-
10
3.5
-
10
100
100
20
25
13
V
V
μA
nA
nA
m
m
m
I
DSS
I
GSS
drain leakage current
gate leakage current
R
DSon
drain-source on-state
resistance
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