參數(shù)資料
型號： BUK6213-30A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： N溝道 TrenchMOS 中間級場效應(yīng)管
封裝： BUK6213-30A<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數(shù)： 3/10頁
文件大?。?/td> 280K
代理商： BUK6213-30A
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 2 February 2011
3 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by bondwires.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 k
Min
-
-
-20
-
-
-
-
Max
30
30
20
45
55
64
257
Unit
V
V
V
A
A
A
A
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
;
see
Figure 3
[1]
[2]
[1]
I
DM
peak drain current
T
mb
= 25 °C; pulsed; t
p
≤
10 μs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
P
tot
T
stg
T
j
Source-drain diode
I
S
total power dissipation
storage temperature
junction temperature
-
-55
-55
102
175
175
W
°C
°C
source current
T
mb
= 25 °C
[1]
-
-
-
64
55
257
A
A
A
[2]
I
SM
Avalanche ruggedness
E
DS(AL)S
peak source current
pulsed; t
p
≤
10 μs; T
mb
= 25 °C
non-repetitive drain-source
avalanche energy
I
D
= 55 A; V
sup
≤
30 V; R
GS
= 50
;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
267
mJ
Fig 1.
Continuous drain current as a function of
mounting base temperature.
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nk64
0
20
40
60
80
0
50
100
150
200
T
mb
(
°
C)
I
D
(A)
Capped at 55 A due to bondwires
T
mb
(
°
C)
0
200
150
50
100
03na19
40
80
120
P
der
(%)
0
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BUK6213-30A,118 功能描述:MOSFET Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6213-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V33ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,33A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,33A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6213-30C,118 功能描述:MOSFET N-CHAN 30V 47A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6215-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V57ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6215-75C,118 功能描述:MOSFET N-CHAN 75V 57A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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