參數(shù)資料
型號： BUK6213-30A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： N溝道 TrenchMOS 中間級場效應(yīng)管
封裝： BUK6213-30A<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數(shù)： 5/10頁
文件大小： 280K
代理商： BUK6213-30A
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 2 February 2011
5 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
I
DSS
drain leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C;
see
Figure 4
; see
Figure 5
-
-
500
μA
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V
I
D
= 25 A; V
DS
= 24 V; V
GS
= 5 V
-
-
-
-
-
-
-
44
26
7
14
1490
505
325
-
-
-
-
1986
606
445
nC
nC
nC
nC
pF
pF
pF
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DS
= 25 V; R
L
= 1.2
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
12
95
75
105
2.5
-
-
-
-
-
ns
ns
ns
ns
nH
measured from drain to center of die
L
S
measured from source lead to source
bond pad
-
7.5
-
nH
Source-drain diode
V
SD
t
rr
Q
r
source-drain voltage
reverse recovery time
recovered charge
I
S
= 15 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= -10 V; V
DS
= 25 V
-
-
-
0.85
49
27
1.2
-
-
V
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 4.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 5.
Normalized drain-source on-state resistance
factor as a function of junction temperature
03nk60
0
10
20
30
0
50
100
150
200
I
D
(A)
R
DSon
(m
Ω
)
label is V
GS
(V)
20
10
5
4.5
4
3.5
03aa27
0
0.5
1
1.5
2
60
0
60
120
180
T
j
(
°
C)
a
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BUK6215-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V57ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
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