參數(shù)資料
型號: BUK102-50GS
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor TOPFET
中文描述: 150 A BUF OR INV BASED PRPHL DRVR, PSFM3
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 5/11頁
文件大小: 109K
代理商: BUK102-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK102-50GS
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.3. Normalised continuous drain current.
I
D
% = 100
I
D
/I
D
(25 C) = f(T
mb
); conditions: V
IS
= 5 V
Fig.4. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.5. Transient thermal impedance.
Z
th
j-mb
= f(t); parameter D = t
p
/T
Fig.6. Typical output characteristics, T
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
μ
s & t
p
< t
d sc
Fig.7. Typical on-state characteristics, T
j
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
μ
s
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
BUK102-50GS
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
D =
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
BUK102-50GS
VDS / V
ID / A
180
160
140
120
100
80
60
40
20
0
8
9
11
10
7
6
5
4
3
VIS / V =
1
100
VDS / V
1000
100
10
1
BUK102-50GS
10
ID & IDM / A
Overload protection characteristics not shown
DC
100 us
1 ms
10 ms
100 ms
10 us
tp =
RDS(ON)=VDSID
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
BUK102-50GS
10
9
VDS / V
ID / A
80
70
60
50
40
30
20
10
0
3
4
5
6
8
7
VIS / V =
January 1993
5
Rev 1.200
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