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參數(shù)資料
| 型號： | BUK102-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | PowerMOS transistor TOPFET |
| 中文描述： | 150 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 109K |
| 代理商： | BUK102-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK102-50GS
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Continuous off-state drain source
voltage
1
Continuous input voltage
Continuous drain current
Continuous drain current
Repetitive peak on-state drain current
Total power dissipation
Storage temperature
Continuous junction temperature
2
V
IS
= 0 V
-
50
V
V
IS
I
D
I
D
I
DRM
P
D
T
stg
T
j
T
sold
-
0
-
-
-
-
11
50
31
200
125
150
150
V
A
A
A
W
C
C
T
mb
≤
25 C; V
IS
= 10 V
T
mb
≤
100 C; V
IS
= 10 V
T
mb
≤
25 C; V
IS
= 10 V
T
mb
≤
25 C
-
normal operation
-55
-
Lead temperature
during soldering
-
250
C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
ISP
Protection supply voltage
3
for valid protection
5
-
V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage
V
IS
= 10 V
-
50
V
Short circuit load protection
Protected drain source supply voltage
4
V
IS
= 10 V
V
DDP(P)
-
-
-
16
24
2.1
V
V
V
IS
= 5 V
T
mb
= 25 C
P
DSM
Instantaneous overload dissipation
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
DROM
E
DSM
Repetitive peak clamping current
Non-repetitive clamping energy
V
IS
= 0 V
T
mb
≤
25 C; I
DM
= 25 A;
V
DD
≤
25 V; inductive load
T
mb
≤
85 C; I
DM
= 16 A;
V
DD
≤
20 V; f = 250 Hz
-
-
50
1
A
J
E
DRM
Repetitive clamping energy
-
80
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
The input voltage for which the overload protection circuits are functional.
4
The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P)
maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
January 1993
2
Rev 1.200
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| BUK104-50L | PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | PowerMOS transistor Logic level TOPFET |
| BUK104-50S | PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | PowerMOS transistor Logic level TOPFET |
| BUK139-50DL | Logic level TOPFET D-PAK version of BUK118-50DL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK104-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK105-50L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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