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參數(shù)資料
| 型號(hào)： | BUK102-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor TOPFET |
| 中文描述： | 150 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BUK102-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK102-50GS
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 10 V; I
DM
= 25 A t
p
≤
300
μ
s;
δ
0.01
V
DS
= 13 V; V
IS
= 10 V
MIN.
17
TYP.
28
MAX.
-
UNIT
S
I
D(SC)
Drain current
1
-
150
-
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C. R
I
= 50
. Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
t
r
t
d off
t
f
t
d on
t
r
t
d off
t
f
Turn-on delay time
V
DD
= 13 V; V
IS
= 10 V
resistive load R
L
= 1.1
V
DD
= 13 V; V
IS
= 0 V
resistive load R
L
= 1.1
V
DD
= 13 V; V
IS
= 10 V
inductive load I
DM
= 11 A
V
DD
= 13 V; V
IS
= 0 V
inductive load I
DM
= 11 A
-
1.5
-
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Rise time
-
5.5
-
Turn-off delay time
-
13
-
Fall time
-
9
-
Turn-on delay time
-
1.5
-
Rise time
-
1.3
-
Turn-off delay time
-
18
-
Fall time
-
1.4
-
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
≤
25 C; V
IS
= 0 V
-
50
A
REVERSE DIODE CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDS
t
rr
Forward voltage
I
S
= 50 A; V
IS
= 0 V; t
p
= 300
μ
s
not applicable
2
-
1.0
1.5
V
Reverse recovery time
-
-
-
-
ENVELOPE CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
L
d
Internal drain inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
3.5
-
nH
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
1
During overload before short circuit load protection operates.
2
The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993
4
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK104-50L | PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | PowerMOS transistor Logic level TOPFET |
| BUK104-50S | PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | PowerMOS transistor Logic level TOPFET |
| BUK139-50DL | Logic level TOPFET D-PAK version of BUK118-50DL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK104-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK105-50L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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