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參數(shù)資料
| 型號： | BUK102-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor TOPFET |
| 中文描述： | 150 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 109K |
| 代理商： | BUK102-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK102-50GS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
R
th j-a
Junction to mounting base
-
-
0.8
1.0
K/W
Junction to ambient
in free air
-
60
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
V
IS
= 0 V; I
DM
= 2 A; t
p
≤
300
μ
s;
δ
≤
0.01
50
-
-
V
Drain-source clamping voltage
-
-
70
V
I
DSS
I
DSS
I
DSS
R
DS(ON)
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 50 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 40 V; V
IS
= 0 V; T
j
= 125 C
Drain-source on-state
resistance
-
-
-
0.5
1
10
10
20
100
μ
A
μ
A
μ
A
m
m
I
DM
= 25 A;
t
p
≤
300
μ
s;
δ
≤
0.01
V
IS
= 10 V
V
IS
= 5 V
-
-
22
30
28
35
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
Short circuit load protection
1
T
mb
= 25 C; L
≤
10
μ
H
E
DS(TO)
Overload threshold energy
V
DD
= 13 V; V
IS
= 10 V
t
d sc
Response time
V
DD
= 13 V; V
IS
= 10 V
Over temperature protection
T
j(TO)
Threshold junction temperature V
IS
= 10 V; from I
D
≥
2 A
2
MIN.
TYP.
MAX.
UNIT
-
-
1.1
0.8
-
-
J
ms
150
-
-
C
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
I
IS
V
ISR
V
ISR
I
ISL
V
(BR)IS
R
IG
Input threshold voltage
Input supply current
Protection reset voltage
3
V
DS
= 5 V; I
D
= 1 mA
V
IS
= 10 V; normal operation
1.0
-
2.0
1.5
0.4
2.6
2.0
1.0
3.5
V
mA
V
Protection reset voltage
T
j
= 150 C
V
IS
= 10 V; protection latched
I
I
= 10 mA
to gate of power MOSFET
1.0
-
-
Input supply current
Input clamp voltage
Input series resistance
2
11
-
6
13
1.5
20
-
-
mA
V
k
1
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DSP
maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
2
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
3
The input voltage below which the overload protection circuits will be reset.
January 1993
3
Rev 1.200
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| BUK104-50L | PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | PowerMOS transistor Logic level TOPFET |
| BUK104-50S | PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | PowerMOS transistor Logic level TOPFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK104-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK105-50L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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