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參數(shù)資料
| 型號(hào)： | BUK102-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 200 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, SEP-3 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | BUK102-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK102-50DL
Fig.18. Normalised limiting clamping energy.
E
DSM
% = f(T
mb
); conditions: I
D
= 25 A; V
IS
= 10 V
Fig.19. Clamping energy test circuit, R
IS
= 50
.
E
DSM
=
0.5
LI
D
Fig.20. Typical off-state leakage current.
I
DSS
= f(T
j
); Conditions: V
DS
= 40 V; I
IS
= 0 V.
Fig.21. Normalised input currents (normal & latched).
I
ISO
/I
ISO
25C & I
ISL
/I
ISL
25C = f(T
j
); V
IS
= 5 V
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Tj / C
Idss
1 mA
100 uA
10 uA
1 uA
100 nA
typ.
-60
-20
20
60
Tj / C
100
140
180
Iiso & Iisl normalised to 25 C
1.5
1
0.5
L
D.U.T.
VDD
RIS
R 01
shunt
VDS
-ID/100
+
-
VIS
0
P
D
S
I
TOPFET
ID
0
VDS
0
VDD
V(CL)DSS
Schottky
2
V
(
CL
)
DSS
/(
V
(
CL
)
DSS
V
DD
)
April 1993
8
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK102-50GL | PowerMOS transistor Logic level TOPFET |
| BUK102-50GS | PowerMOS transistor TOPFET |
| BUK104-50L | PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | PowerMOS transistor Logic level TOPFET |
| BUK104-50S | PowerMOS transistor Logic level TOPFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK102-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK102-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK104-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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