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參數(shù)資料
| 型號： | BUK102-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 200 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78, SEP-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 85K |
| 代理商： | BUK102-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK102-50DL
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
R
th j-a
Junction to mounting base
-
-
0.8
1
K/W
Junction to ambient
in free air
-
60
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
V
IS
= 0 V; I
DM
= 4 A; t
p
≤
300
μ
s;
δ
≤
0.01
50
-
-
V
Drain-source clamping voltage
-
-
70
V
I
DSS
I
DSS
I
DSS
R
DS(ON)
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 50 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 40 V; V
IS
= 0 V; T
j
= 125 C
Drain-source on-state
resistance
1
-
-
-
-
0.5
1
10
30
10
20
100
35
μ
A
μ
A
μ
A
m
V
IS
= 5 V; I
DM
= 25 A; t
p
≤
300
μ
s;
δ
≤
0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
Short circuit load protection
2
T
mb
= 25 C; L
≤
10
μ
H; R
L
= 10 m
E
DS(TO)
Overload threshold energy
V
DD
= 13 V; V
IS
= 5 V
t
d sc
Response time
V
DD
= 13 V; V
IS
= 5 V
I
D(SC)
Drain current
3
V
DD
= 13 V; V
IS
= 5 V
I
DM(SC)
Peak drain current
4
V
IS
= 5 V; V
DD
= 13 V
Over temperature protection
T
j(TO)
Threshold junction temperature V
IS
= 5 V; from I
D
≥
2 A
5
MIN.
TYP.
MAX.
UNIT
-
-
-
-
1.1
0.8
75
200
-
-
-
-
J
ms
A
A
150
-
-
C
TRANSFER CHARACTERISTIC
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 10 V; I
DM
= 25 A t
p
≤
300
μ
s;
δ
0.01
MIN.
17
TYP.
28
MAX.
-
UNIT
S
1
Continuous input voltage. The specified pulse width is for the drain current.
2
Refer to OVERLOAD PROTECTION LIMITING VALUES.
3
Continuous drain-source supply voltage. Pulsed input voltage.
4
Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd).
5
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
April 1993
3
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK102-50GL | PowerMOS transistor Logic level TOPFET |
| BUK102-50GS | PowerMOS transistor TOPFET |
| BUK104-50L | PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | PowerMOS transistor Logic level TOPFET |
| BUK104-50S | PowerMOS transistor Logic level TOPFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK102-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK102-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK104-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50LP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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