參數(shù)資料
型號(hào): BUK102-50DL
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor Logic level TOPFET
中文描述: 200 A BUF OR INV BASED PRPHL DRVR, PSFM3
封裝: PLASTIC, TO-220AB, SOT-78, SEP-3
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 85K
代理商: BUK102-50DL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK102-50DL
Fig.6. Typical on-state characteristics, T
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 2 ms
Fig.7. Typical on-state resistance, T
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
IS
; t
p
= 2 ms
Fig.8. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 C = f(T
j
); I
D
= 25 A; V
IS
= 5 V
Fig.9. Typical overload protection characteristics.
t
d sc
= f(P
DS
); conditions: V
IS
4 V; T
j
= 25 C.
Fig.10. Normalised limiting overload dissipation.
P
DSM
% =100
P
DSM
/P
DSM
(25 C) = f(T
mb
)
Fig.11. Typical overload protection characteristics.
Conditions: V
DD
= 13 V; V
IS
= 5 V; SC load = 30 m
0
2
4
VDS / V
ID / A
BUK102-50DL
80
70
60
50
40
30
20
10
0
5
3
1
VIS / V =
5.5
4.5
6
5
4
3.5
3
0.1
1
10
PDS / kW
BUK102-50DL
10
1
0.1
td sc / ms
PDSM
0
20
40
60
80
ID / A
RDS(ON) / mOhm
BUK102-50DL
80
70
60
50
40
30
20
10
0
5.5
6
5
4.5
4
3.5
VIS / V =
-60
-40
-20
0
20
40
Tmb / C
60
80
100
120
140
PDSM%
120
100
80
60
40
20
0
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60
-20
20
60
100
140
180
220
Tmb / C
BUK102-50DL
1.5
1.0
0.5
0
Energy & Time
Time / ms
Energy / J
Tj(TO)
April 1993
6
Rev 1.100
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