參數(shù)資料
型號: BUJD203AD
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN power transistor with integrated diode
中文描述: 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 8/15頁
文件大小: 214K
代理商: BUJD203AD
BUJD203AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 September 2010
8 of 15
NXP Semiconductors
BUJD203AD
NPN power transistor with integrated diode
Fig 11. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 12. DC current gain as a function of collector
current; typical values
Fig 13. Test circuit for resistive load switching
Fig 14. Switching times waveforms for resistive load
001aab996
V
BEsat
(V)
I
C
(A)
10
1
10
1
0.6
0.8
0.2
0.4
1.0
1.2
1.4
0
001aab994
I
C
(A)
10
2
10
1
10
1
10
10
2
h
FE
1
V
CE
= 5 V
1 V
T
j
= 25
°
C
001aab989
t
p
R
B
V
IM
0
R
L
DUT
V
CC
T
001aab990
I
C
I
B
10 %
10 %
90 %
90 %
t
on
t
off
t
s
t
f
t
t
I
Bon
I
Boff
I
Con
t
r
30 ns
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