參數(shù)資料
型號(hào)： BUJD203AD
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor with integrated diode
中文描述： 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 2/15頁
文件大小： 214K
代理商： BUJD203AD
BUJD203AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 September 2010
2 of 15
NXP Semiconductors
BUJD203AD
NPN power transistor with integrated diode
2.
Pinning information
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
B
base
C
collector
[1]
E
emitter
C
mounting base; connected to
collector
Simplified outline
Graphic symbol
SOT428 (DPAK)
3
2
mb
1
sym131
C
E
B
Table 3.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUJD203AD
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
CESM
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
Conditions
V
BE
= 0 V
I
E
= 0 A
I
B
= 0 A
DC; see
Figure 1
; see
Figure 2
; see
Figure 4
see
Figure 1
; see
Figure 2
; see
Figure 4
DC
Min
-
-
-
-
-
-
-
-
-65
-
Max
850
850
425
4
8
2
4
80
150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
T
mb
≤
25 °C; see
Figure 3
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BUJD203AD,118 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
BUJD203AX,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BU-JSB3100L 制造商:Fuji Electric 功能描述:
BUK 9575-100A 制造商:NXP Semiconductors 功能描述:Bulk
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