參數(shù)資料
型號(hào)： BUJD105AD
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor with integrated diode
中文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 5/13頁
文件大?。?/td> 186K
代理商： BUJD105AD
BUJD105AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 13
NXP Semiconductors
BUJD105AD
NPN power transistor with integrated diode
6.
Characteristics
[1]
Measured with half-sine wave voltage (curve tracer).
Table 6.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off
current
V
BE
= 0 V; V
CE
= 700 V; T
j
= 25 °C
V
BE
= 0 V; V
CE
= 700 V; T
j
= 125 °C
[1]
-
-
-
-
-
-
-
-
0.2
0.5
0.2
0.1
mA
mA
mA
mA
[1]
I
CBO
I
CEO
collector-base cut-off current V
CB
= 700 V; I
E
= 0 A
collector-emitter cut-off
current
emitter-base cut-off current
collector-emitter saturation
voltage
base-emitter saturation
voltage
forward voltage
DC current gain
[1]
V
CE
= 400 V; I
B
= 0 A
[1]
I
EBO
V
CEsat
V
EB
= 9 V; I
C
= 0 A
I
C
= 4 A; I
B
= 0.8 A; see
Figure 6
;
see
Figure 7
I
C
= 4 A; I
B
= 0.8 A; see
Figure 8
-
-
-
0.35
10
1
mA
V
V
BEsat
-
1
1.5
V
V
F
h
FE
I
F
= 4 A; T
j
= 25 °C
I
C
= 4 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 9
; see
Figure 10
I
C
= 1 mA; V
CE
= 5 V; T
mb
= 25 °C
I
C
= 500 mA; V
CE
= 5 V; T
mb
= 25 °C
-
8
1.07
12.5
1.5
-
V
10
13
17
22
34
36
Dynamic characteristics
t
on
t
s
turn-on time
storage time
I
C
= 5 A; I
Bon
= 1 A; I
Boff
= -1 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 11
; see
Figure 12
I
C
= 5 A; I
Bon
= 1 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 25 °C; inductive load;
see
Figure 13
; see
Figure 14
I
C
= 5 A; I
Bon
= 1 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 13
; see
Figure 14
I
C
= 5 A; I
Bon
= 1 A; V
BB
= -5 V;
L
B
= 1 μH; T
mb
= 25 °C; inductive load;
see
Figure 13
; see
Figure 14
I
C
= 5 A; I
Bon
= 1 A; V
BB
= -5 V;
L
B
= 1 μH; T
mb
= 100 °C; inductive
load; see
Figure 13
; see
Figure 14
I
C
= 5 A; I
Bon
= 1 A; I
Boff
= -1 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 11
; see
Figure 12
-
-
0.65
1.8
1
2.5
μs
μs
-
1.2
1.7
μs
-
1.4
1.9
μs
t
f
fall time
-
0.02
0.05
μs
-
0.025
0.1
μs
-
0.3
0.5
μs
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BUJD203AD 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
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