參數(shù)資料
型號(hào)： BUJD103AD
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor with integrated diode
中文描述： 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 6/13頁(yè)
文件大?。?/td> 333K
代理商： BUJD103AD
BUJD103AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
6 of 13
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
6.
Characteristics
[1]
Measured with half-sine wave voltage (curve tracer)
Table 6.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off
current
V
BE
= 0 V; V
CE
= 700 V; T
j
= 125 °C
V
BE
= 0 V; V
CE
= 700 V; T
j
= 25 °C
V
CB
= 700 V; I
E
= 0 A
[1]
-
-
-
-
-
-
2
1
1
mA
mA
mA
[1]
I
CBO
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
collector-emitter
saturation voltage
base-emitter saturation
voltage
forward voltage
DC current gain
[1]
I
CEO
V
CE
= 400 V; I
B
= 0 A
[1]
-
-
0.1
mA
I
EBO
V
EB
= 7 V; I
C
= 0 A
-
-
10
mA
V
CEsat
I
C
= 3 A; I
B
= 0.6 A; see
Figure 7
;
see
Figure 8
I
C
= 3 A; I
B
= 0.6 A; see
Figure 9
-
0.29
1
V
V
BEsat
-
0.99
1.5
V
V
F
h
FE
I
F
= 2 A; T
j
= 25 °C
I
C
= 1 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 10
I
C
= 500 mA; V
CE
= 5 V; T
j
= 25 °C;
see
Figure 10
-
10
1.04
15
1.5
32
V
13
21
32
I
C
= 2 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 10
I
C
= 3 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 10
11
16
22
-
12.5
-
Dynamic characteristics
t
on
turn-on time
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
25 °C; resistive load;
see
Figure 11
; see
Figure 12
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 11
; see
Figure 12
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 25 °C; inductive load;
see
Figure 13
; see
Figure 14
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 13
; see
Figure 14
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 11
; see
Figure 12
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 13
; see
Figure 14
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
25 °C; inductive load;
see
Figure 13
; see
Figure 14
-
0.52
0.6
μs
t
s
storage time
-
2.7
3.3
μs
-
1.2
1.4
μs
-
-
1.8
μs
t
f
fall time
-
0.3
0.35
μs
-
-
0.12
μs
-
0.03
0.06
μs
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