參數(shù)資料
型號： BUJD103AD
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor with integrated diode
中文描述： 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 2/13頁
文件大?。?/td> 333K
代理商： BUJD103AD
BUJD103AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
2 of 13
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
2.
Pinning information
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
Pinning information
Symbol
Description
B
base
C
collector
[1]
E
emitter
Simplified outline
Graphic symbol
SOT428 (DPAK)
3
2
mb
1
sym131
C
E
B
Table 3.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUJD103AD
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
CESM
V
CBO
V
CEO
I
C
Parameter
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
Conditions
V
BE
= 0 V
I
E
= 0 A
I
B
= 0 A
DC; see
Figure 1
; see
Figure 2
;
see
Figure 4
see
Figure 1
; see
Figure 2
; see
Figure 4
DC
Min
-
-
-
-
Max
700
700
400
4
Unit
V
V
V
A
I
CM
I
B
I
BM
P
tot
T
stg
T
j
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
-
-
-
-
-65
-
8
2
4
80
150
150
A
A
A
W
°C
°C
T
mb
≤
25 °C; see
Figure 3
相關(guān)PDF資料
PDF描述
BUJD105AD NPN power transistor with integrated diode
BUJD203AD NPN power transistor with integrated diode
BUJD203AX NPN power transistor with integrated diode
BUJD203A NPN power transistor with integrated diode
BUK6207-55C N-channel TrenchMOS intermediate level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUJD103AD,118 功能描述:兩極晶體管 - BJT TRANS NPN 700V 4A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD105AD 制造商:NXP Semiconductors 功能描述:TRANSISITORNPN400V8ASOT428 制造商:NXP Semiconductors 功能描述:TRANSISITOR,NPN,400V,8A,SOT428 制造商:NXP Semiconductors 功能描述:TRANSISITOR,NPN,400V,8A,SOT428; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:22; No. of Pins:2 ;RoHS Compliant: Yes
BUJD105AD,118 功能描述:兩極晶體管 - BJT TRANS NPN 700V 8A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203A 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V TO220AB 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220AB 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220AB; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
BUJD203A,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*