參數(shù)資料
型號(hào)： BUJ302A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： NPN power transistor
封裝： BUJ302A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<,;
文件頁數(shù)： 6/13頁
文件大?。?/td> 523K
代理商： BUJ302A
BUJ302A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
6 of 13
NXP Semiconductors
BUJ302A
NPN power transistor
6.
Characteristics
[1]
Pulse test: pulse duration
≤
300 μs, duty cycle
≤
2 %
Table 6.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off current
V
BE
= 0 V; V
CE
= 1050 V;
T
mb
= 25 °C
V
CE
= 400 V; I
B
= 0 A; T
mb
= 25 °C
I
B
= 1 mA; I
C
= 0 A; T
mb
= 25 °C
-
0.2
10
μA
I
CEO
V
(BR)EBO
collector-emitter cut-off current
open-collector emitter-base
breakdown voltage
collector-emitter sustaining
voltage
-
15
10
19
250
-
mA
V
V
CEOsus
I
B
= 0 A; I
C
= 10 mA; L
C
= 25 mH;
T
mb
= 25 °C; see
Figure 6
;
see
Figure 7
I
C
= 1 A; I
B
= 0.2 A; T
mb
= 25 °C;
see
Figure 8
; see
Figure 9
I
C
= 3.5 A; I
B
= 1 A; T
mb
= 25 °C;
see
Figure 8
; see
Figure 9
I
C
= 3.5 A; I
B
= 1 A; T
mb
= 25 °C;
see
Figure 10
I
C
= 0.1 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 0.8 A; V
CE
= 3 V; T
mb
= 25 °C;
see
Figure 12
[1]
400
470
-
V
V
CEsat
collector-emitter saturation
voltage
[1]
-
0.15
0.5
V
[1]
-
0.6
1.5
V
V
BEsat
base-emitter saturation voltage
[1]
-
1.1
1.5
V
h
FE
DC current gain
[1]
48
66
100
[1]
25
42
50
Dynamic characteristics
t
s
t
f
storage time
fall time
I
C
= 2.5 A; I
Bon
= 0.5 A;
I
Boff
= -0.5 A; R
L
= 60
;
V
BB
= -5 V; T
mb
= 25 °C; resistive
load; t
p
= 300 μs; see
Figure 13
;
see
Figure 14
-
-
-
-
3.5
500
μs
ns
Fig 6.
Test circuit for collector-emitter sustaining
voltage
Fig 7.
Oscilloscope display for collector-emitter
sustaining voltage test waveform
001aab987
horizontal
1
Ω
300
Ω
6 V
vertical
oscilloscope
50 V
100
Ω
to 200
Ω
30 Hz to 60 Hz
001aab988
V
CE
(V)
min
V
CEOsus
I
C
(mA)
10
100
250
0
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參數(shù)描述
BUJ302A,127 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ302AD 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes
BUJ302AD,118 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ302AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes
BUJ302AX,127 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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