參數(shù)資料
型號: BUJ302A
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: NPN power transistor
封裝: BUJ302A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<,;
文件頁數(shù): 10/13頁
文件大小: 523K
代理商: BUJ302A
BUJ302A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
10 of 13
NXP Semiconductors
BUJ302A
NPN power transistor
8.
Revision history
Table 7.
Document ID
BUJ302A v.2
Modifications:
Revision history
Release date
20110328
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
19980801
Objective specification
Data sheet status
Product data sheet
Change notice
-
Supersedes
BUJ302A v.1
BUJ302A v.1
-
-
相關(guān)PDF資料
PDF描述
BUJ303AD NPN power transistor
BUJ303AX NPN power transistor
BUJ303A NPN power transistor
BUJ303B NPN power transistor
BUJ403A NPN power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUJ302A,127 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ302AD 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes
BUJ302AD,118 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ302AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes
BUJ302AX,127 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2