參數(shù)資料
型號: BUF636A
英文描述: Silicon NPN High Voltage Switching Transistor
中文描述: 硅npn型高壓開關(guān)晶體管
文件頁數(shù): 5/8頁
文件大小: 126K
代理商: BUF636A
BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
5 (8)
Typical Characteristics
(T
case
= 25 C unless otherwise specified)
95 10508
0
100
200
300
400
0
1
2
3
4
6
600
5
500
I
C
V
CE
– Collector Emitter Voltage ( V )
V
CEsat
< 2V
0.1 x I
C
< I
B2
< 0.5 x I
C
Figure 4. V
CEW
– Diagram
0
4
8
12
16
0
1
2
3
4
5
20
95 10512
I
C
V
CE
– Collector Emitter Voltage ( V )
400 mA
290 mA
190 mA
95 mA
49 mA
I
B
= 490 mA
Figure 5. I
C
vs. V
CE
0.001
0.01
0.1
1
10
95 10510
10V
5V
25V
1
10
100
h
F
I
C
– Collector Current ( A )
V
CE
= 2V
Figure 6. h
FE
vs. I
C
95 10525
0
25
50
75
100
0.001
0.01
0.1
1
10
100
150
125
T
case
– Case Temperature (
°
C )
P
t
2.5 K/W
R
thJA
= 85 K/W
25 K/W
50 K/W
12.5 K/W
Figure 7. P
tot
vs.T
case
95 10513
0.01
0.1
1
0.01
0.1
1
10
V
C
I
B
– Base Current ( A )
10
I
C
= 4A
3A
2A
1A
0.6A
Figure 8. V
CEsat
vs. I
B
95 10511
1
0.001
10
100
h
F
I
C
– Collector Current ( A )
T
j
= 125
°
C
25
°
C
75
°
C
0.01
0.1
1
10
Figure 9. h
FE
vs. I
C
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