參數(shù)資料
型號(hào): BUF636A
英文描述: Silicon NPN High Voltage Switching Transistor
中文描述: 硅npn型高壓開關(guān)晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 126K
代理商: BUF636A
BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
1 (8)
Silicon NPN High Voltage Switching Transistor
Features
S
imple-s
W
itch-
O
ff
T
ransistor (SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
Very low switching losses
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
14283
Absolute Maximum Ratings
T
case
= 25
°
C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Symbol
V
CEO
V
CEW
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
450
550
1000
11
5
7.5
2.5
4
50
150
Unit
V
V
V
V
A
A
A
A
W
C
C
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T
case
25 C
–65 to +150
Maximum Thermal Resistance
T
case
= 25
°
C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
R
thJC
Value
2.5
Unit
K/W
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