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參數(shù)資料
| 型號： | BUF636A |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開關(guān)晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | BUF636A |
BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
2 (8)
Electrical Characteristics
T
case
= 25
°
C, unless otherwise specified
Parameter
Collector cut-off current
Test Conditions
Symbol
I
CES
I
CES
V
(BR)CEO
Min
Typ
Max
50
0.5
Unit
A
mA
V
V
CES
= 1000 V
V
CES
= 1000 V; T
case
= 150 C
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
I
E
= 1 mA
I
C
= 0.8 A; I
B
= 0.2 A
I
C
= 2.5 A; I
B
= 0.8 A
I
C
= 0.8 A; I
B
= 0.2 A
I
C
= 2.5 A; I
B
= 0.8 A
V
CE
= 1 V; I
C
= 2 A
V
CE
= 2 V; I
C
= 0.8 A
V
CE
= 2 V; I
C
= 0.8 A
V
CE
= 2 V; I
C
= 2.5 A
V
CE
= 5 V; I
C
= 5 A
V
S
= 50 V; L = 1 mH; I
C
= 5 A;
I
B1
= 1.7 A; –I
B2
= 0.5 A;
–V
BB
= 5 V
I
C
= 2.5 A; I
B
= 0.5 A, t = 1 s
I
C
= 2.5 A; I
B
= 0.5 A, t = 3 s
I
C
= 200 mA; V
CE
= 10 V;
f = 1 MHz
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
450
V
(BR)EBO
V
CEsat
V
CEsat
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEW
11
V
V
V
V
V
0.1
0.2
0.9
1
0.2
0.4
1
1.2
DC forward current transfer ratio
6
15
15
7
4
550
21
21
10
6
Collector-emitter working voltage
V
Dy
V
CEsatdyn
V
CEsatdyn
f
T
10
2.8
15
5
V
V
g
Gain bandwidth product
4
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUF640 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 6A I(C) | TO-220AB |
| BUF640A | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 6A I(C) | TO-220AB |
| BUF642 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 6A I(C) | TO-220AB |
| BUF646 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| BUF646A | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 7A I(C) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUF640 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 6A I(C) | TO-220AB |
| BUF640A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 6A I(C) | TO-220AB |
| BUF642 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN High Voltage Switching Transistor |
| BUF644 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN High Voltage Switching Transistor |
| BUF646 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
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