參數(shù)資料
型號(hào)： BT168B
廠商： NXP SEMICONDUCTORS
元件分類： 晶閘管
英文描述： Thyristors logic level for RCD/ GFI/ LCCB applications(應(yīng)用于RCD/ GFI/ LCCB的可控硅邏輯電平)
中文描述： 0.8 A, 200 V, SCR, TO-92
封裝： PLASTIC, TO-92 VARIANT, 3 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 43K
代理商： BT168B
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB applications
BT168 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
thyristors
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
(RCD/ GFI/ LCCB)
where a minimum I
limit is needed.
These devices may be interfaced
directly
to
microcontrollers,
integrated circuits and other low
power gate trigger circuits.
passivated,
in
sensitive
plastic
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
MAX. UNIT
a
envelope,
BT168
B
D
E
G
V
DRM
,
V
RRM
I
T(AV)
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
200
400
500
600
V
applications
0.5
0.5
0.5
0.5
A
I
T(RMS)
I
TSM
0.8
8
0.8
8
0.8
8
0.8
8
A
A
logic
PINNING - TO92 variant
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode
2
gate
3
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
B
D
E
G
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
-
200
1
400
1
500
1
600
1
V
half sine wave;
T
≤
83 C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
= 25 C prior to surge
t = 10 ms
I
TM
= 2 A; I
= 10 mA;
dI
G
/dt = 100 mA/
μ
s
-
0.5
A
I
T(RMS)
I
TSM
RMS on-state current
Non-repetitive peak
on-state current
-
-
-
0.8
8
9
A
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
0.32
50
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
1
5
5
2
A
V
V
W
W
C
C
over any 20 ms period
0.1
150
125
-40
-
a
k
g
3 2 1
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.100
相關(guān)PDF資料
PDF描述
BT168_SERIES Thyristors logic level for RCD/GFI/LCCB applications
BT168SERIES Thyristors logic level for RCD/ GFI/ LCCB applications
BT168D Thyristors logic level for RCD/ GFI/ LCCB applications(應(yīng)用于RCD/ GFI/ LCCB的可控硅邏輯電平)
BT168 Film Capacitor; Voltage Rating:600VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.1uF; Capacitance Tolerance:+/- 10%; Lead Pitch:24.613mm; Series:PS; Size:30.48 x 16.51; Termination:Radial Leaded
BT169E Thyristors logic level(可控硅邏輯電平)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BT168BW 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications
BT168D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications
BT168DW 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications
BT168E 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT168E,112 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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