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參數(shù)資料
| 型號： | BT169E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors logic level(可控硅邏輯電平) |
| 中文描述： | 0.8 A, 500 V, SCR, TO-92 |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 42K |
| 代理商： | BT169E |
Philips Semiconductors
Product specification
Thyristors
logic level
BT169 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
thyristors
intended for use in general purpose
switching
and
applications.
These
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
passivated,
in
sensitive
plastic
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
MAX. UNIT
a
envelope,
BT169
B
D
E
G
phase
control
V
DRM
,
V
RRM
I
T(AV)
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
200
400
500
600
V
devices
are
0.5
0.5
0.5
0.5
A
logic
integrated
I
T(RMS)
I
TSM
0.8
8
0.8
8
0.8
8
0.8
8
A
A
PINNING - TO92 variant
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode
2
gate
3
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
B
D
E
G
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
Average on-state current
-
200
1
400
1
500
1
600
1
V
half sine wave;
T
≤
83 C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
= 25 C prior to surge
t = 10 ms
I
TM
= 2 A; I
= 10 mA;
dI
G
/dt = 100 mA/
μ
s
-
0.5
A
I
T(RMS)
I
TSM
RMS on-state current
Non-repetitive peak
on-state current
-
-
-
0.8
8
9
A
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
0.32
50
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
1
5
5
2
A
V
V
W
W
C
C
over any 20 ms period
0.1
150
125
-40
-
a
k
g
3 2 1
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT169GW | Thyristors logic level(可控硅邏輯電平) |
| BT169 | Thyristor logic level |
| BT169BW | Thyristor logic level |
| BT169DW | Thyristor logic level |
| BT169EW | Thyristor logic level |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT169EG-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
| BT169EG-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
| BT169EL-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
| BT169EL-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
| BT169E-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
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