參數(shù)資料
型號(hào)： BS62LV256TC
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： Very Low Power/Voltage CMOS SRAM 32K X 8 bit
中文描述： 非常低功率/電壓CMOS SRAM的32K的× 8位
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 331K
代理商： BS62LV256TC
Revision 2.2
April 2001
1
A6
A7
BSI
Very Low Power/Voltage CMOS SRAM
32K X 8 bit
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Vcc=
5.0V
3.0V
SPEED
(ns)
Operating
(I
CC
, Max)
Vcc=
5.0V
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=
3.0V
Vcc=
Vcc=
3.0V
PKG
TYPE
BS62LV256SC
BS62LV256TC
BS62LV256PC
BS62LV256JC
BS62LV256DC
BS62LV256SI
BS62LV256TI
BS62LV256PI
BS62LV256JI
BS62LV256DI
PIN CONFIGURATIONS
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
0
O
C to +70
O
C
2.4V ~ 5.5V
70
1uA
0.2uA
35mA
20mA
-40
O
C to +85
O
C
2.4V ~ 5.5V
70
2uA
0.4uA
40mA
25mA
Wide Vcc operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
High speed access time :
-70 70ns (Max.) at Vcc=3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
PRODUCT FAMILY
The BS62LV256 is a high performance, very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.01uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by active LOW chip
enable (CE), active LOW output enable (OE) and three-state
output drivers.
The BS62LV256 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV256 is available in the DICE form, JEDEC standard
28pin 330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and
8mmx13.4mm TSOP (normal type).
DESCRIPTION
FEATURES
BLOCK DIAGRAM
Brilliance Semiconductor Inc
.
reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
512 x 512
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Output
Buffer
Address Input Buffer
A3 A2 A1 A0 A10
Data
Input
Buffer
Control
Gnd
Vdd
OE
WE
CE
DQ5
DQ6
DQ4
A12
A14
A13
A8
A9
8
8
8
8
DQ7
DQ3
DQ2
DQ1
DQ0
A11
A5
12
64
512
512
18
A4
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
3
4
5
6
7
8
9
10
11
12
13
14
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
BS62LV256
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
C
R0201-BS62LV256
BS62LV256TC
BS62LV256TI
BS62LV256SC
BS62LV256SI
BS62LV256PC
BS62LV256PI
BS62LV256JC
BS62LV256JI
相關(guān)PDF資料
PDF描述
BS62LV256TI Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256 Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV4000 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4000STC Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4000STI Very Low Power/Voltage CMOS SRAM 512K X 8 bit
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS62LV256TC55 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256TC70 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256TCG55 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256TCG70 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256TCP55 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 32K X 8 bit
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