參數(shù)資料
型號(hào): BS62LV256TC
廠商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Very Low Power/Voltage CMOS SRAM 32K X 8 bit
中文描述: 非常低功率/電壓CMOS SRAM的32K的× 8位
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 331K
代理商: BS62LV256TC
Revision 2.2
April 2001
6
JEDEC
PARAMETER
NAME
t
AVAX
PARAMETER
NAME
DESCRIPTION
BS62LV256
MIN. TYP. MAX.
UNIT
t
WC
Write Cycle Time
70
--
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
70
--
--
ns
t
AVWL
t
AS
Address Set up Time
0
--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
70
--
--
ns
t
WLWH
t
WP
Write Pulse Width
50
--
--
ns
t
WHAX
t
WR
Write Recovery Time
(CE , WE)
0
--
--
ns
t
WLOZ
t
WHZ
Write to Output in High Z
--
--
30
ns
t
DVWH
t
DW
Data to Write Time Overlap
40
--
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
--
--
ns
t
GHOZ
t
OHZ
Output Disable to Output in High Z
0
--
30
ns
t
WHQX
t
OW
End ot Write to Output Active
5
--
--
ns
AC ELECTRICAL CHARACTERISTICS
( TA =0
o
C to + 70
o
C and Vcc=3.0V)
WRITE CYCLE
BSI
BS62LV256
R0201-BS62LV256
WRITE CYCLE1
(1)
t
WR
(3)
t
CW
(11)
(2)
t
WP
t
AW
t
OHZ
(4,10)
t
AS
t
DH
t
DW
D
IN
D
OUT
WE
CE
OE
ADDRESS
(5)
t
WC
SWITCHING WAVEFORMS (WRITE CYCLE)
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