參數(shù)資料
型號(hào): bq2060
廠商: Benchmark Technology Group
英文描述: SBS v1.1-Compliant Gas Gauge IC(Gas Gauge芯片)
中文描述: 銀紫荊星章1.1版兼容的氣體計(jì)IC(電量監(jiān)測(cè)計(jì)芯片)
文件頁數(shù): 32/45頁
文件大?。?/td> 457K
代理商: BQ2060
EEPROM Programming
The following sections describes the function of each
EEPROM location and how thedata is tobestored.
Fundamental Parameters
Sense Resistor Value
Two factors are used to scale the current related mea-
surements. The 16-bit
ADC Sense Resistor Gain
value
in E E 0x68–0x69 scales Current() to mA.
ADC Sense Resistor Gain
from its nominal value pro-
vides a method to calibrate the current readings for sys-
tem errors and the sense resistor value (R
S
) . The nomi-
nal valueis set by
Adjusting
ADC SenseResistor Gain
625
(Rs)
(4)
The 16-bit
VFC Sense Resistor Gain
in EE 0x6a–0x6b
scales each VFC interrupt to mAh.
VFC Sense Resistor
Gain
is based on the resistance of the series sense resis-
tor. The following formula computes a nominal or start-
ing value for
VFC SenseResistor Gain
from the sense re-
sistor value.
VFC SenseResistor Gain
409.6
(Rs)
(5)
Sense resistor values are limited to the range of 0.00916
to0.100
.
Digital Filter
The desired digital filter threshold, VDF (
μ
V), is set by
calculating thevaluestored in
Digital Filter
EE 0x52.
Digital Filter
2250
VDF
(6)
Cell Characteristics
Battery Pack Capacity and Voltage
Pack capacity is programmed in mAh units to
Pack Ca-
pacity
in EE 0x3a–0x3b and
Last Measured Discharge
in
EE 0x38–0x39. In mAh mode, the bq2060 copies
Pack
Capacity
to DesignCapacity(). In mWh mode, the bq2060
multiplies
Pack C apacity
by
Design Voltage
E E
0x12–0x13 to calculate DesignCapacity() scaled to
10mWh.
Design Voltage
is stored in mV.
Last Measured Discharge
is modified over the course of
pack usage to reflect cell aging under the particular use
conditions.
The bq2060 updates
Last Measured Dis-
charge
in mAh after a capacity learning cycle. The
bq2060 uses the
Last Measured Discharge
value to cal-
culateFullChargeCapacity() in mAh or 10mWh mode.
EDV Thresholds and Near Full Percentage
The bq2060 uses three pack voltage thresholds to pro-
vide voltage-based warnings of low battery capacity.
The bq2060 uses the values stored in EEPROM for the
EDV0, EDV1, and EDV2 values or calculates the three
thresholds from a base value and the temperature, ca-
pacity, and rate adjustment factors stored in EEPROM.
If EDV compensation is disabled then EDV0, EDV1, and
EDV2 are stored directly in mV in EE 0x72–0x73, EE
0x74–0x75, and EE 0x78–0x79, respectively.
For capacity correction at E DV2,
Battery Low %
E E
0x54 can be set at a desired state-of-charge,
STATEOFCHARGE%, in the range of 5 to 20%. Typical
values for STATEOFCHARGE% are 7–12% representing
7 –12% capacity.
Battery Low %
= STATEOFCHARGE%
2.56
(7)
The bq2060 updates FCC if a qualified discharge occurs
from a near-full threshold to E DV 2. T he desired
near-full threshold window, NFW (mAh), is programmed
in
Near Full
in EE 0x55.
Near Full
=NFW
2
(8)
EDV Discharge Rate and Temperature
Compensation
If EDV compensation is enabled, the bq2060 calculates
battery voltage to determine EDV0, EDV1, EDV2 as a
function of EDV, battery capacity, temperature, and dis-
charge load The general equation for EDV0, EDV1, and
EDV2 calculation is
(9)
EDV0,1,2
=
EMF
F
BL
- |
I
LOAD
|
R0
F
TZ
F
CY
where
EMF is a no-load battery voltage that is higher than
the highest EDV threshold that is computed. EMF is
programmed in mV in
EMF/ EDV1
EE 0x74–0x75.
I
LOAD
is thecurrent dischargeload.
F
BL
is the factor that adjusts the EDV voltage for bat-
tery capacity and temperature to match the no-load
characteristics of thebattery.
F
BL
= f ( C0, C + C1, T )
(10)
where
32
bq2060
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