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參數(shù)資料
| 型號： | bq2011K |
| 廠商： | Benchmark Technology Group |
| 英文描述： | Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片) |
| 中文描述： | 氣體計(jì)IC，高放電率（用于高放電率的氣體計(jì)芯片） |
| 文件頁數(shù)： | 14/20頁 |
| 文件大?。?/td> | 175K |
| 代理商： | BQ2011K |
The segment outputs are modulated as two banks, with
segments 1, 3, and 5 alternating with segments 2 and 4.
The segment outputs are modulated at approximately
320Hz,with each bank active for 30% of the period.
SEG
1
blinks at a 4Hz rate whenever V
SB
has been de-
tected to be below V
EDV
to indicate a low-battery condi-
tion or NAC is less than 10% of PFC.
Microregulator
The bq2011K can operate directly from 4 cells. To facili-
tate the power supply requirements of the bq2011K, an
REF output is provided to regulate an external low-
threshold n-FET. A micropower source for the bq2011K
can be inexpensively built using the FET and an exter-
nal resistor.
14
bq2011K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| bq2011 | Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片) |
| bq2012 | Gas Gauge IC With Slow-Charge Control(Gas Gauge芯片（帶慢充電控制）) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BQ2011KSN | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Battery Management |
| BQ2011KSN- | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates |
| BQ2011KSN-D121 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| BQ2011KSN-N | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates |
| BQ2011PN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management |
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