參數(shù)資料
型號: bq2011K
廠商: Benchmark Technology Group
英文描述: Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片)
中文描述: 氣體計(jì)IC,高放電率(用于高放電率的氣體計(jì)芯片)
文件頁數(shù): 12/20頁
文件大?。?/td> 175K
代理商: BQ2011K
The bq2011K calculates the available charge as a func-
tion of NAC, temperature, and a full reference, either
LMD or PFC. The results of the calculation are avail-
able via the display port or the gas gauge field of the
TMPGG register. The register is used to give available
capacity in
116
increments from 0 to
1516
.
The gas gauge display and the gas gauge portion of the
TMPGG register are adjusted for cold temperature de-
pendencies. A piece-wise correction is performed as fol-
lows:
The adjustment between > 0°C and -20°C < T < 0°C has
a 4°C hysteresis.
Nominal Available Charge Register (NAC)
The read/write NACH register (address=03h) and the
read-only NACL register (address=17h) are the main
gas gauging registers for the bq2011K. The NAC regis-
ters are incremented during charge actions and decre-
mented during discharge and self-discharge actions.
The correction factors for charge/discharge efficiency are
applied automatically to NAC.
If SEG
4
= 0 on reset, then NACH = PFC and NACL = 0.
If SEG
4
= Z or H, the NACH and NACL registers are
cleared to zero.
NACL stops counting when NACH
reaches zero. When the bq2011K detects a valid charge,
NACL resets to zero;
writing to the NAC register affects
the available charge counts and, therefore, affects the
bq2011K gas gauge operation.
Battery Identification Register (BATID)
The read/write BATID register (address=04h) is avail-
able for use by the system to determine the type of bat-
tery pack. The BATID contents are retained as long as
V
CC
is greater than 2V. The contents of BATID have no
effect on the operation of the bq2011K. There is no de-
fault setting for this register.
Last Measured Discharge Register (LMD)
LMD is a read/write register (address=05h) that the
bq2011K uses as a measured full reference.
bq2011K adjusts LMD based on the measured discharge
capacity of the battery from full to empty. In this way
the bq2011K updates the capacity of the battery. LMD
is set to PFC during a bq2011K reset.
The
Secondary Status Flags Register (FLGS2)
The read-only FLGS2 register (address=06h) contains
the secondary bq2011K flags.
The
charge rate
flag (CR) is used to denote the fast
charge regime.
Fast charge is assumed whenever a
charge action is initiated. The CR flag remains asserted
if the charge rate does not fall below 2 counts/sec.
The CR values are:
Where CR is:
0
When charge rate falls below 2 counts/sec
1
When charge rate is above 2 counts/sec
12
bq2011K
TMPGG Gas Gauge Bits
7
6
5
4
3
2
1
0
-
-
-
-
GG3
GG2
GG1
GG0
TMP3
TMP2
TMP1
TMP0
Temperature
0
0
0
0
T < -30°C
0
0
0
1
-30°C < T < -20°C
0
0
1
0
-20°C < T < -10°C
0
0
1
1
-10°C < T < 0°C
0
1
0
0
0°C < T < 10°C
0
1
0
1
10°C < T < 20°C
0
1
1
0
20°C < T < 30°C
0
1
1
1
30°C < T < 40°C
1
0
0
0
40°C < T < 50°C
1
0
0
1
50°C < T < 60°C
1
0
1
0
60°C < T < 70°C
1
0
1
1
70°C < T < 80°C
1
1
0
0
T > 80°C
Table 6. Temperature Register Contents
Temperature
Available Capacity Calculation
> 0°C
NAC / “Full Reference”
-20°C < T < 0°C
0.75*NAC / “Full Reference”
0.5*NAC / “Full Reference”
< -20°C
FLGS2 Bits
7
6
5
4
3
2
1
0
CR
-
-
-
-
-
-
-
相關(guān)PDF資料
PDF描述
bq2011 Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片)
bq2012 Gas Gauge IC With Slow-Charge Control(Gas Gauge芯片(帶慢充電控制))
bq2013H Gas Gauge IC for Power-Assist Applications(應(yīng)用于電源援助的氣體Gauge芯片)
bq2014H Low-Cost NiCd/NiMH Gas Gauge IC(低價格NiCd/NiMHGas Gauge芯片)
bq2014 Gas Gauge IC with External Charge Control(氣體Gauge(帶外部電荷控制))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BQ2011KSN 制造商:TI 制造商全稱:Texas Instruments 功能描述:Battery Management
BQ2011KSN- 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates
BQ2011KSN-D121 制造商:Rochester Electronics LLC 功能描述:- Bulk
BQ2011KSN-N 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates
BQ2011PN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management