參數(shù)資料
型號(hào): bq2011K
廠商: Benchmark Technology Group
英文描述: Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片)
中文描述: 氣體計(jì)IC,高放電率(用于高放電率的氣體計(jì)芯片)
文件頁(yè)數(shù): 11/20頁(yè)
文件大小: 175K
代理商: BQ2011K
The
charge status
flag (CHGS) is asserted when a
valid charge rate is detected.
valid when V
SRO
< -400
μ
V.
400
μ
V or discharge activity clears CHGS.
Charge rate is deemed
A V
SRO
of greater than-
The CHGS values are:
Where CHGS is:
0
Either discharge activity detected or V
SRO
>
-400
μ
V
1
V
SRO
< -400
μ
V
The
battery replaced
flag (BRP) is asserted whenever
the potential on the SB pin (relative to V
SS
), V
SB
, rises
above 0.1V and determines the internal registers have
been corrupted.
The BRP flag is also set when the
bq2011K is reset (see the RST register description).
BRP is cleared if either the bq2011K is charged until
NAC = LMD or discharged until EDV is reached. BRP =
1 signifies that the device has been reset.
The BRP values are:
Where BRP is:
0
bq2011K is charged until NAC = LMD or
discharged until the EDV flag is asserted
1
Initial or full V
CC
reset, or a serial port ini-
tiated reset has occurred
The
maximum cell voltage
flag (MCV)
whenever the potential on the SB pin (relative to V
SS
) is
above 2.0V. The MCV flag is asserted until the condition
causing MCV is removed.
is asserted
The MCV values are:
Where MCV is:
0
V
SB
< 2.0V
1
V
SB
> 2.0V
The
valid discharge
flag (VDQ) is asserted when the
bq2011K is discharged from NAC=LMD.
The flag re-
mains set until either LMD is updated or one of three
actions that can clear VDQ occurs:
I
The self-discharge count register (SDCR) has
exceeded the maximum acceptable value (4096
counts) for an LMD update.
I
A valid charge action equal to 256 NAC counts with
V
SRO
< -400
μ
V.
I
The EDV flag was set at a temperature below 0°C
The VDQ values are:
Where VDQ is:
0
SDCR
4096, subsequent valid charge ac-
tion detected, or EDV is asserted with the
temperature less than 0°C
1
On first discharge after NAC = LMD
The
end-of-discharge warning
flag (EDV) warns the
user that the battery is empty. SEG1 blinks at a 4Hz
rate. EDV detection is disabled if OVLD = 1. The EDV
flag is latched until a valid charge has been detected.
The EDV values are:
Where EDV is:
0
Valid charge action detected
1
V
SB
< V
EDV
Temperature and Gas Gauge Register (TMPGG)
The read-only TMPGG register (address=02h) contains
two data fields. The first field contains the battery tem-
perature. The second field contains the available charge
from the battery.
The bq2011K contains an internal temperature sensor.
The temperature is used to set charge efficiency factors
as well as to adjust the self-discharge coefficient. The
temperature register contents may be translated as
shown in Table 6.
11
bq2011K
FLGS1 Bits
7
6
5
4
3
2
1
0
-
-
MCV
-
-
-
-
-
FLGS1 Bits
7
6
5
4
3
2
1
0
-
BRP
-
-
-
-
-
-
FLGS1 Bits
7
6
5
4
3
2
1
0
-
-
-
-
VDQ
-
-
-
FLGS1 Bits
7
6
5
4
3
2
1
0
CHGS
-
-
-
-
-
-
-
TMPGG Temperature Bits
7
6
5
4
3
2
1
0
TMP3
TMP2
TMP1
TMP0
-
-
-
FLGS1 Bits
7
6
5
4
3
2
1
0
-
-
-
-
-
-
EDV
-
相關(guān)PDF資料
PDF描述
bq2011 Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片)
bq2012 Gas Gauge IC With Slow-Charge Control(Gas Gauge芯片(帶慢充電控制))
bq2013H Gas Gauge IC for Power-Assist Applications(應(yīng)用于電源援助的氣體Gauge芯片)
bq2014H Low-Cost NiCd/NiMH Gas Gauge IC(低價(jià)格NiCd/NiMHGas Gauge芯片)
bq2014 Gas Gauge IC with External Charge Control(氣體Gauge(帶外部電荷控制))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BQ2011KSN 制造商:TI 制造商全稱:Texas Instruments 功能描述:Battery Management
BQ2011KSN- 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates
BQ2011KSN-D121 制造商:Rochester Electronics LLC 功能描述:- Bulk
BQ2011KSN-N 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates
BQ2011PN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management