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參數(shù)資料
| 型號： | BPV10 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 中文描述： | Photodiodes 10V 215mW 875nm |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 97K |
| 代理商： | BPV10 |
BPV10
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 22-Nov-11
2
Document Number: 81502
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
TEST CONDITION
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 20 V, E = 0
SYMBOL
V
F
V
(BR)
I
ro
C
D
C
D
V
O
V
O
I
K
I
K
I
ra
MIN.
TYP.
1.0
MAX.
1.3
UNIT
V
V
nA
pF
pF
mV
mV
μA
μA
μA
60
1
5
Diode capacitance
11
3.8
480
450
80
65
85
Open circuit voltage
E
A
= 1 klx
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
A
= 1 klx
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
V
R
= 5 V,
λ
= 950 nm
Short circuit current
Reverse light current
I
ra
38
70
μA
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
s(
λ
)
λ
p
λ
0.1
η
NEP
D
t
r
t
f
0.55
± 20
920
A/W
deg
nm
nm
%
W/
√
Hz
cm
√
Hz/W
ns
ns
380 to 1100
72
3 x 10
-14
3 x 10
12
2.5
2.5
λ
= 950 nm
V
R
= 20 V,
λ
= 950 nm
V
R
= 20 V,
λ
= 950 nm
V
R
= 50 V, R
L
= 50
Ω
,
λ
= 820 nm
V
R
= 50 V, R
L
= 50
Ω
,
λ
= 820 nm
20
40
60
80
1
10
100
1000
I
r
T
amb
- Ambient Temperature (°C)
100
94 8436
V
R
= 20 V
0.6
0.8
1.0
1.2
1.4
I
r
T
amb
- Ambient Temperature (°C)
94 8416
V
= 5 V
λ
= 950 nm
0
100
80
60
40
20
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| BPV10 | 制造商:Vishay Semiconductors 功能描述:Photo Diode |
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| BPV10F | 功能描述:光電二極管 10V 215mW 875nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV10NF | 功能描述:光電二極管 60V 215mW 875nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV10NF | 制造商:Vishay Semiconductors 功能描述:Photo Diode |
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