- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384152 > BPV10 (Vishay Intertechnology,Inc.) Silicon PIN Photodiode(反向電壓60V，寬帶檢測(cè)器應(yīng)用的PIN光二極管) PDF資料下載
參數(shù)資料
| 型號(hào)： | BPV10 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode(反向電壓60V，寬帶檢測(cè)器應(yīng)用的PIN光二極管) |
| 中文描述： | 硅PIN光電二極管（反向電壓60V的寬帶檢測(cè)器應(yīng)用的密碼光二極管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 80K |
| 代理商： | BPV10 |
BPV10
Vishay Telefunken
2 (5)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81502
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
I
F
= 50 mA
I
R
= 100 A, E = 0
V
R
= 20 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
E
A
= 1 klx
E
e
= 1 mW/cm
2
, = 950 nm
E
A
= 1 klx
E
e
= 1 mW/cm
2
, = 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 5 V
V
R
= 5 V, = 950 nm
Symbol
V
F
V
(BR)
I
ro
C
D
C
D
V
o
V
o
I
k
I
k
I
ra
I
ra
Min
Typ
1.0
Max
1.3
Unit
V
V
nA
pF
pF
mV
mV
A
A
A
A
60
1
11
3.8
480
450
80
65
85
70
5
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
38
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
s( )
0.55
±
20
920
A/W
deg
nm
nm
%
W/
√
Hz
cm
√
Hz/
W
ns
p
0.5
570...1040
72
3x10
–14
3x10
12
= 950 nm
V
R
= 20 V, = 950 nm
V
R
= 20 V, = 950 nm
NEP
D
*
Rise Time
V
R
= 50 V, R
L
= 50 ,
= 820 nm
V
R
= 50 V, R
L
= 50 ,
= 820 nm
t
r
2.5
Fall Time
t
f
2.5
ns
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
20
40
60
80
1
10
100
1000
I
r
T
amb
– Ambient Temperature (
°
C )
100
94 8436
V
R
=20V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.6
0.8
1.0
1.2
1.4
I
r
100
94 8416
V
R
=5V
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BPV10 | Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| BPV11F | Silicon NPN Phototransistor(檢測(cè)應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
| BPV11F | Silicon NPN Phototransistor |
| BPV11F | Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4 |
| BPV11 | Silicon NPN Phototransistor(檢測(cè)應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPV10 | 制造商:Vishay Semiconductors 功能描述:Photo Diode |
| BPV10_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode, RoHS Compliant |
| BPV10F | 功能描述:光電二極管 10V 215mW 875nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV10NF | 功能描述:光電二極管 60V 215mW 875nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV10NF | 制造商:Vishay Semiconductors 功能描述:Photo Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。