參數(shù)資料
型號: BLV902
英文描述: TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 600MA I(C) | SOT-409B
中文描述: 晶體管|晶體管|叩| 28V的五(巴西)總裁| 600毫安一(c)|的SOT - 409B
文件頁數(shù): 7/10頁
文件大小: 54K
代理商: BLV902
February 1996
7
Philips Semiconductors
Product specification
UHF power transistor
BLV90
Fig.7 Load power as a function of source power.
handbook, halfpage
PL
(W)
0
0.1
PS (W)
0.2
0.3
1.2
0.4
0
0.8
MDA394
f = 900 MHz; class-B operation; typical values.
T
mb
= 25
°
C; V
CE
= 12.5 V;
T
= 25
°
C; V
CE
= 12.5 V;
- - - - T
a
= 25
°
C; V
CE
= 9.6 V
Fig.8
Power gain and efficiency as a function of
load power.
handbook, halfpage
0
8
4
0
0.4
40
80
120
0
PL (W)
Gp
(dB)
0.8
1.6
1.2
MDA395
Gp
η
C
(%)
η
C
f = 900 MHz; class-B operation; typical values.
T
mb
= 25
°
C; V
CE
= 12.5 V;
T
= 25
°
C; V
CE
= 12.5 V;
- - - - T
a
= 25
°
C; V
CE
= 9.6 V
RUGGEDNESS
The device is capable to withstand a full load mismatch
(VSWR = 50; all phases) at rated load power up to a
supply voltage of 15.5 V at T
a
= 25
°
C. Device mounted on
a printed-circuit board (see Fig.6).
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