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參數(shù)資料
| 型號(hào)： | BLV902 |
| 英文描述： | TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 600MA I(C) | SOT-409B |
| 中文描述： | 晶體管|晶體管|叩| 28V的五（巴西）總裁| 600毫安一（c）|的SOT - 409B |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | BLV902 |
February 1996
3
Philips Semiconductors
Product specification
UHF power transistor
BLV90
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Dissipation = 2.25 W
Note
1.
Device mounted on a printed-circuit board (see Fig.6).
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
DC or average
(peak value); f
>
1 MHz
Total power dissipation
f
>
1 MHz; T
mb
<
105
°
C
Storage temperature
Operating junction temperature
V
CBO
V
CEO
V
EBO
max.
max.
max.
36 V
16 V
3 V
I
C
; I
C(AV)
I
CM
max.
max.
0.2 A
0.6 A
P
tot(rf)
T
stg
T
j
max.
65 to
+
150
°
C
max.
3.5 W
200
°
C
From junction to ambient
(1)
(f
>
1 MHz)
T
a
= 25
°
C
From junction to mounting base
T
mb
= 25
°
C (f
>
1 MHz)
R
th j
a (RF)
max.
60 K/W
R
th j-mb (RF)
max.
19 K/W
Fig.2 Power/temperature curve.
I Continuous RF operation (f
>
1 MHz)
II Short-time RF operation during mismatch (f
>
1 MHz)
handbook, halfpage
(W)
0
II
I
40
80
Tmb (
°
C)
160
0
4
120
3
2
1
MDA389
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