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參數(shù)資料
| 型號： | BLV902 |
| 英文描述： | TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 600MA I(C) | SOT-409B |
| 中文描述： | 晶體管|晶體管|叩| 28V的五（巴西）總裁| 600毫安一（c）|的SOT - 409B |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 54K |
| 代理商： | BLV902 |
February 1996
4
Philips Semiconductors
Product specification
UHF power transistor
BLV90
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Collector-base breakdown voltage
open emitter; I
C
= 2.5 mA
Collector-emitter breakdown voltage
open base; I
C
= 10 mA
Emitter-base breakdown voltage
open collector; I
E
= 0.5 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
D.C. current gain
I
C
= 0.15 A; V
CE
= 10 V
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 12.5 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12.5 V
Collector-mounting base capacitance
V
(BR)CBO
>
36 V
V
(BR)CEO
>
16 V
V
(BR)EBO
>
3 V
I
CES
<
1 mA
E
SBR
>
0.3 mJ
h
FE
>
25
C
c
typ.
1.8 pF
C
re
C
c-mb
typ.
typ.
1.0 pF
0.5 pF
Fig.3 T
j
= 25
°
C; typical values.
handbook, halfpage
0
80
40
0
150
IC (mA)
hFE
300
600
450
MDA390
VCE =
12.5 V
10 V
Fig.4 I
E
= i
e
= 0; f = 1 MHz; typical values.
handbook, halfpage
Cc
(pF)
0
4
8
VCB (V)
16
3
1
0
2
12
MDA391
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