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參數(shù)資料
| 型號： | BLV859 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-262B, 5 PIN |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 126K |
| 代理商： | BLV859 |
1996 Jul 26
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter push-pull class-A test circuit.
Notes
1.
Three-tone test method (vision carrier
8 dB, sound carrier
10 dB, sideband signal
16 dB), 0 dB corresponds to
peak sync level.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), 0 dB corresponds to
peak sync level.
2.
Ruggedness in class-A operation
The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: V
CE
= 25 V; I
CQ
= 2
×
2.25 A; f = 860 MHz; T
h
= 25
°
C; P
o sync
= 20 W.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(A)
P
o sync
(W)
≥
20
(1)
≥
20
(2)
G
p
(dB)
≥
10
(1)
≥
10
(2)
d
im
(dB)
≤
54
(1)
≤
51
(2)
CW class-A
860
860
25
25
2
×
2.25
2
×
2.25
Fig.5
Output power as a function of input power;
typical values.
V
CE
= 25 V; I
CQ
= 2
×
2.25 A; f = 860 MHz; (3-tone;
8/
16/
10 dB).
(1) T
h
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
Po sync
(W)
0
2
4
Pi sync (W)
8
20
0
40
60
MGD543
6
(2)
(1)
Fig.6
Power gain as a function of output power;
typical values.
V
CE
= 25 V; I
CQ
= 2
×
2.25 A; f = 860 MHz; (3-tone;
8/
16/
10 dB).
(1) T
h
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
0
20
Gp
(dB)
40
60
80
6
2
10
MGD544
Po sync (W)
(2)
(1)
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