參數(shù)資料
型號(hào)： BLV859
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
中文描述： 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-262B, 5 PIN
文件頁數(shù)： 4/16頁
文件大?。?/td> 126K
代理商： BLV859
1996 Jul 26
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
CHARACTERISTICS
Values apply to either transistor section; T
j
= 25
°
C unless otherwise specified.
Note
1.
The value of C
c
is that of the die only; it is not measurable, because of the internal matching network.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
36
(1)
MAX.
3
6
140
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
collector-emitter leakage current
DC current gain
collector capacitance
I
C
= 30 mA; I
E
= 0
I
C
= 60 mA; I
B
= 0
I
E
= 1.2 mA; I
C
= 0
V
CB
= 27 V; V
BE
= 0
V
CE
= 20 V
V
CE
= 25 V; I
C
= 2.25 A
V
CB
= 25 V; I
E
= i
e
= 0;
f = 1 MHz
V
CE
= 25 V; I
B
= 0; f = 1 MHz
60
28
2.5
30
V
V
V
mA
mA
pF
C
re
feedback capacitance
22
pF
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 25 V; t
p
= 500
μ
s;
δ
= <1 %.
handbook, halfpage
0
2
hFE
4
IC (A)
6
120
40
0
80
MGD541
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
Cc
(pF)
60
40
20
10
20
40
MGD542
30
VCB (V)
I
E
= i
e
= 0; f = 1 MHz.
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