參數(shù)資料
型號(hào)： BLV859
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
中文描述： 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-262B, 5 PIN
文件頁數(shù)： 3/16頁
文件大?。?/td> 126K
代理商： BLV859
1996 Jul 26
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to Limiting values and Thermal characteristics
1.
Total device; both sections equally loaded.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
60
28
2.5
15
15
145
+
150
200
V
V
V
A
A
W
°
C
°
C
T
mb
= 70
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink note 1
P
tot
= 145 W; T
mb
= 70
°
C note 1 0.9
K/W
K/W
0.15
Fig.2 Power derating curve.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
Ptot
(W)
0
240
160
80
(2)
(1)
0
40
80
160
MGD540
120
Tmb
°
C
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