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參數(shù)資料
| 型號： | BLV859 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-262B, 5 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 126K |
| 代理商： | BLV859 |
1996 Jul 26
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
FEATURES
Double internal input and output matching for an
optimum wideband capability and high gain
Polysilicon emitter ballasting resistors for an optimum
temperature profile
Gold metallization ensures excellent reliability.
APPLICATION
Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT262B
4-lead rectangular flange package, with two ceramic caps.
It delivers a P
o sync
= 20 W in class-A operation at
860 MHz and a supply voltage of 25 V.
PINNING SOT262B
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
c1
c2
b1
b2
e
collector 1
collector 2
base 1
base 2
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM031
c1
b1
b2
c2
e
1
2
3
4
Top view
5
5
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter push-pull test circuit.
Note
1.
Three-tone test signal (
8,
16 and
10 dB); d
im
=
54 dB.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(A)
P
o sync
(W)
≥
20
(1)
G
p
(dB)
≥
10
(1)
CW class-A
860
25
2
×
2.25
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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