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參數(shù)資料
| 型號： | BLV33F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF linear power transistor(VHF線性功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, FM-6 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 148K |
| 代理商： | BLV33F |
1996 Oct 10
8
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
List of components used in test circuit
(see Figs 9 and 10)
.
Notes
1.
2.
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (
ε
r
= 4.5); thickness
1
16
".
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C15
multilayer ceramic chip
capacitor; note 1
film dielectric trimmer
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor; note 1
polyester capacitor
multilayer ceramic chip
capacitor; note 1
solid tantalum capacitor
2 turns of 1.6 mm enamelled
Cu wire
560 pF, 500 V
C2, C4, C12, C14
C3
4 to 40 pF
10 pF, 500 V
2222 809 08002
C5
470 nF, 50 V
2222 856 48474
C6, C10
680 pF, 50 V
2222 852 13681
C7, C8
47 pF, 500 V
placed 8 mm from
transistor edge
C9
C11
330 nF
68 pF, 500 V
C13
L1
6.8
μ
F, 35 V
int. diameter 5 mm
length 5 mm
leads 2
×
3 mm
L2
L3
L4
microchoke
stripline; note 2
2 turns of closely wound
1 mm enamelled Cu wire
stripline; note 2
2 turns of 1.6 mm enamelled
Cu wire
1
μ
H
30
4322 057 01080
6 mm
×
32.7 mm
int. diameter 5 mm
leads 2
×
10 mm
6 mm
×
24 mm
int. diameter 4 mm
length 4.5 mm
leads 2
×
3 mm
L5
L6
30
R1
carbon resistor
10
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