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參數(shù)資料
| 型號(hào)： | BLV33F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF linear power transistor(VHF線性功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, FM-6 |
| 文件頁(yè)數(shù)： | 13/20頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | BLV33F |
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1996 Oct 10
13
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
List of components used in test circuit
(see Figs 16 and 17).
Notes
1.
2.
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (
ε
r
= 4.5); thickness
1
16
".
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C18
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
film dielectric trimmer
multilayer ceramic chip
capacitor; note 1
film dielectric trimmer
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
film dielectric trimmer
2 turns of 1.6 mm enamelled
Cu wire
620 pF, 100 V
C2
27 pF, 500 V
C3
C4
2 to 18 pF
30 pF, 500 V
2222 809 09003
C5, C14
C6, C10
4 to 40 pF
470 nF, 50 V
2222 809 08002
2222 856 48474
C7, C15
680 pF, 50 V
2222 852 13681
C8, C9
68 pF, 500 V
placed 6.4 mm from
transistor edge
placed 10 mm from
transistor edge
C11, C12
43 pF, 500 V
C13
39 pF, 500 V
C16
3.3 pF, 500 V
C17
L1
1.4 to 5.5 pF
2222 809 09001
int. diameter 4.5 mm
length 4 mm
leads 2
×
4 mm
int. diameter 5 mm
leads 2
×
7 mm
6 mm
×
47.8 mm
int. diameter 5 mm
leads 2
×
8 mm
6 mm
×
42.9 mm
int. diameter 4 mm
length 4 mm
leads 2
×
3 mm
L2
3 turns of 1 mm closely
wound enamelled Cu wire
stripline; note 2
2 turns of 1 mm closely
wound enamelled Cu wire
stripline; note 2
2 turns of 1.6 mm enamelled
Cu wire
L3
L4
30
L5
L6
30
R1
carbon resistor
10
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