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參數(shù)資料
| 型號： | BLV33F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF linear power transistor(VHF線性功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, FM-6 |
| 文件頁數(shù)： | 14/20頁 |
| 文件大小： | 148K |
| 代理商： | BLV33F |
1996 Oct 10
14
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
Fig.17 Component layout and printed-circuit board for 224.25 MHz class-AB test circuit.
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
handbook, full pagewidth
MGG151
C1
C2
C3
C4
L1
L3
L5
L6
L2
C8
C5
C9
C6
C7
C15
C11
C13
R1
C17
C18
C16
C12
L4
C14
C10
+
VBB
+
VCC
rivets
150
57
rivets
rivets
rivets
50
input
50
output
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相關(guān)代理商/技術(shù)參數(shù) |
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| BLV34 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV36 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 8.5A I(C) | SOT-161 |
| BLV37 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 10A I(C) | SOT-179VAR |
| BLV38 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 10A I(C) | SOT-179VAR |
| BLV45/12 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
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